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PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN64N50P
VDSS ID25
RDS(on) trr
= =
500V 50A 85m 200ns
miniBLOC, SOT-227 B E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6mm (0.062 in.) from Case for 10s 50/60 Hz, RMS IISOL 1mA Mounting Torque Terminal Connection Torque t = 1min t = 1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Ratings 500 500 30 40 50 150 64 2.5 20 625 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W C C C C V~ V~ Nm/lb.in. Nm/lb.in. g Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Low Gate Drive Requirement High Power Density Applications: Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250A VDS = VGS, ID = 8mA VGS = 30V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 32A, Note 1 TJ = 125 Characteristic Values Min. Typ. Max. 500 3.0 5.5 200 25 1 85 V V nA A mA m Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls G = Gate S = Source
G S
S D
D = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS99349F(05/09)
IXFN64N50P
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 32A Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 32A RG = 2 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 32A, Note 1 Characteristic Values Min. Typ. Max. 30 50 9700 970 30 30 25 85 22 150 50 50 0.20 S nF pF pF ns ns ns ns nC nC nC C/W C/W SOT-227B Outline
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0V
Characteristic Values (TJ = 25C, Unless Otherwise Specified) Min. Typ. Max. 64 250 1.5 200 0.6 6.0 A A V ns C A
Repetitive, Pulse Width Limited by TJM IF = 64A, VGS = 0V, Note 1 IF = 25A, -di/dt = 100A/s VR = 100V
Note 1: Pulse Test, t 300s; Duty Cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFN64N50P
Fig. 1. Output Characteristics @ 25C
70 60 50 VGS = 10V 8V 7V 160 140 120 VGS = 10V 8V
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
ID - Amperes
6V 40 30 20 10 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 5V
100 80 60
7V
6V 40 20 0 0 5 10 15 20 25 30 5V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125C
70 60 50 VGS = 10V 8V 7V 3.2 3.0 2.8 2.6
Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature
VGS = 10V
RDS(on) - Normalized
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 I D = 32A I D = 64A
ID - Amperes
6V 40 30 20 10 0 0 2 4 6 8 10 12 14 16
5V
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 32A Value vs. Drain Current
3.4 3.2 3.0 2.8 VGS = 10V TJ = 125C
Fig. 6. Maximum Drain Current vs. Case Temperature
55 50 45 40
RDS(on) - Normalized
2.6
ID - Amperes
TJ = 25C
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 20 40 60 80 100 120 140 160
35 30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFN64N50P
Fig. 7. Input Admittance
90 80 70 90 80 70 TJ = - 40C
Fig. 8. Transconductance
ID - Amperes
60 50 40 30 20 10 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
g f s - Siemens
60 50
25C
TJ = 125C 25C - 40C
125C 40 30 20 10 0 0 20 40 60 80 100 120 140
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
240 220 200 180 10 9 8 7 VDS = 250V I D = 32A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 125C TJ = 25C
160 140 120 100 80 60 40 20 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000
Fig. 12. Maximum Transient Thermal Impedance
1.000
f = 1 MHz Capacitance - PicoFarads
Ciss 10,000
1,000 Coss
100
Crss 10 0 5 10 15 20 25 30 35 40
Z(th)JC - C / W
0.100
0.010 0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_64N50P(9J)4-27-09

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